Exciton excitation and photocurrent enhancement tuned by ferroelectric polarization in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mrow><mml:mi>Sn</mml:mi><mml:mi mathvariant="normal">S</

Ferroelectric polarization provides the possibility for electrically modulating photoconductance gain in low-dimensional optoelectronic devices. The utilization of ferroelectric polymers to manipulate the photocarrier dynamics in ${\mathrm{Sn}\mathrm{S}}_{2}$ films has not yet been investigated, although it has become highly desired for facilitating the photodetection application of ${\mathrm{Sn}\mathrm{S}}_{2}$. To reveal the potential regulating advantages of ferroelectric P(VDF-TrFE) polymer on ${\mathrm{Sn}\mathrm{S}}_{2}$ film, the two-dimensional coupling structure of ${\mathrm{Sn}\mathrm{S}}_{2}$/P(VDF-TrFE) is designed. Benefiting from the ultrahigh residual electrostatic field after voltage polarization, the photoluminescence effect in adjacent ${\mathrm{Sn}\mathrm{S}}_{2}$ film is substantially adjusted. Significantly, the as-fabricated ferroelectric-integrated ${\mathrm{Sn}\mathrm{S}}_{2}$ device exhibits a tunable photodetection capability to light of wavelength 405 nm upon varying the polarization direction. The photocurrent under positive polarization is increased by two times compared with that for the unpolarized state, whereas the dark current is depressed by five orders of magnitude under negative polarization. The surface-potential characterizations from theoretical calculations confirmed that the ferroelectric polarization could modulate the Fermi level, channel carrier concentration, and photocarrier dynamics in ${\mathrm{Sn}\mathrm{S}}_{2}$ film. This study provides an alternative method for electrically modulating exciton excitation and photocurrent enhancement for ${\mathrm{Sn}\mathrm{S}}_{2}$, which also demonstrates a promising material platform for research of ferroelectric-tuned optoelectronic devices.