Tb3+-Doped LGS Crystals: Crystal Growth and Electro-Elastic Features

Piezoelectric materials have garnered significant attention due to their diverse applications in technologies such as sensors, actuators, and energy-harvesting systems. This study focuses on the growth and characterization of Tb3+-doped La3Ga5SiO14 (LGS) crystals. A novel 10% Tb3+-doped single LGS crystal was successfully grown using the Czochralski method. The crystal structure and fluorescence properties were determined, and the electro-elastic properties were evaluated by the impedance method, which assessed dielectric, piezoelectric, and elastic constants. The Tb3+-doped crystal was observed to crystallize in the trigonal system, with the concentration of the Tb3+ ion in the crystal determined to be 2.50 wt%. The piezoelectric coefficients were measured as d11 = 5.41 pC/N and d14 = −5.52 pC/N, and the dielectric constants were found to be 19.60 and 52.75, respectively. The temperature-dependent behavior of Tb:LGS crystals was investigated, particularly concerning their elastic constants, demonstrating favorable thermal stability. This study provides valuable insights into the relationship between the crystals’ structural characteristics and performance. Additionally, the fluorescence properties were measured; a long lifetime (τ = 1.655 ms) indicated the potential applications of Tb:LGS crystals in laser technology.