Analysis of the variation CIGS Based PV cell through the SCAPs-1D

The novel material is grabbing the attention of the research since there is continuous study on the photovoltaic cell. CIGS is also gaining the attention of everyone, which is also used as a semiconductor material for converting the photovoltaic energy to electrical energy with higher power conversion efficiency. Copper indium gallium selenide (CIGS) used as absorber layer in this thin-film solar cell, which aims to examine the manner in which differences in thickness and temperature effect the efficiency of these layers. Throughout this study, CIGS absorber layer is expected to have a temperature that falls between 300° and 400° K and at the thickness that is optimized between 0.05 and 0.5 μm. This highlight temperature range at with CIGS provide the high conversation efficiency. For the purpose of determining the level of performance that CIGS thin-film solar cells are capable of, a number of significant characteristics, including efficiency, open-circuit voltage (Voc), short-circuit current density (Jsc), and fill factor (FF), will be analyzed. This study will give useful insights that may be utilized to increase the efficiency and performance of CIGS thin-film solar cells. These insights will be provided by improving the design process, which will in turn supply these insights.