Atomic Alignment and Defects at the Interface between Amorphous Insulating Film and Single-Crystal Diamond

Diamond is expected to be a material for next-generation power devices, and there is a lot of activity in the areas of crystal growth and device development. The performance of electronic devices is determined by the electronic state at the insulator/semiconductor interface. However, until now there has been no method for analyzing the atomic alignment at this interface with non-destructively, and it has been difficult to directly clarify the origin of defects.