1380 V <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> trench MIS-type Schottky barrier diode with ultra-low leakage current
Abstract A β -Ga 2 O 3 trench Schottky barrier diode (T-SBD) with double-field-plates terminal and cost-effective Al 2 O 3 /SiN dielectric layer is fabricated. Owing to the shielding effect of the trench metal–Insulator–semiconductor structure, compared with conventional SBD (C-SBD), the breakdown voltage of the T-SBD is improved from 700 V (C-SBD) to 1380 V (T-SBD) with specific on-resistance ( R on,sp ) being 6.06 mΩ·cm 2 . Compared to C-SBD, Baliga’s figure of merit for the T-SBD is improved from 131 MW cm −2 (C-SBD) to 314 MW cm −2 (T-SBD). Moreover, the leakage current of T-SBD is significantly reduced from ∼0.33 mA cm −2 (C-SBD) to ∼38 μ A cm −2 (T-SBD).
Authors
- L. X. Qian (ORCID: https://orcid.org/0000-0003-4120-9292)
- Haimeng Huang (ORCID: https://orcid.org/0000-0002-3000-741X)
- Bo Yi
- Junji Cheng
- Bingliang Zhang (ORCID: https://orcid.org/0000-0002-9318-3680)
- Moufu Kong (ORCID: https://orcid.org/0000-0003-2964-7652)
- Yuan Qiao (ORCID: https://orcid.org/0000-0003-0188-0700)
- Zijian Zhang (ORCID: https://orcid.org/0000-0002-2702-8025)
- Guohao Yu (ORCID: https://orcid.org/0000-0002-6921-2728)
- Hongqiang Yang
- JunYu Xia
Institutions
- Suzhou Institute of Nano-tech and Nano-bionics (CN)
- National Engineering Research Center of Electromagnetic Radiation Control Materials (CN)
- Suzhou Research Institute (CN)
Publication Details
- Journal
- Japanese Journal of Applied Physics
- Published
- 2025-03-01
- DOI
- https://doi.org/10.35848/1347-4065/adc053
- Citations
- 1
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.43