TCAD-based evaluations of a high-performance, low-power dielectric modulated BioTFET with dopingless tunneling junctions

This article introduces a biosensor that utilizes a dopingless Ge/Si heterostructure for more efficient detecting the intended biomolecules . In order to convert the intrinsic germanium-based semiconductor within our bioTFET (biological tunneling field-effect transistor) into a P + region, we have surrounded the source with two heavily-doped silicon layers. This addresses challenges such as silicide formation and parasitic metal-to-source tunneling, which are commonly found in charge plasma-based devices. In the drain region, we have incorporated N + doping instead of using inductive metal, resulting in improved AC performance. To verify our findings, we have used a calibrated device simulator and proposed a detailed fabrication process for our bioTFET. In order to assess the functionality of our biosensor, we have executed a series of simulations to quantify its performance metrics, including the sensitivity of drain current and subthreshold swing. Due to our device's optimal design, we achieved ideal parameters such as S I D = 6.15 × 10 6 ,and S S S a v g = 0.92 at V GS = 0.7 V. • Proposed a dopingless Ge/Si heterostructure for enhanced biomolecule detection using a bioTFET. • Mitigated silicide formation and parasitic tunneling by adding doped silicon layers that surrounds the source region. • Replaced inductive metal with N + doping in the drain, improving AC biosensor performance. • Used calibrated simulations to validate results and detail bioTFET fabrication processes. • Achieved high sensitivity ( S I D = 6.15 × 10 6 ) and low subthreshold swing S S S a v g = 0.92 at V GS = 0.7 V.