Enhancement of the Optoelectric and Photovoltaic Responses of Al/PVP:ZnTiO₃/p‐Si Structure by Graphene Nanoparticles

In this work, the optoelectronic response of Al/p‐Si photodiodes (PDs) with and without (PVP:Gr‐ZnTiO 3 ) composite interlayer is investigated in dark and under various light intensities ( P ). The manufacturing/surface preparation is thoroughly explained. The electric/optic parameters including leakage/saturation current ( I 0 ), series/shunt resistances ( R s / R sh ), barrier height (BH), ideality factor ( n ), energy‐dependent density distribution of surface/interface levels ( N ss ), photoinduced current ( I ph ), photosensitivity ( S ), optical responsivity ( R ), and specific detectivity ( D *) are calculated from the I–V data in dark and under illumination intensities. Raising the light intensity results in a drop in Φ B0 and R s quantities while increasing the I 0 and n values due to photogenerated electron–hole pairs under illumination. The Φ B0 ‐ P and Φ B0 ‐ n graphs are used to calculate the illumination factor and the Φ B0 in the ideal form. An acceptable linear behavior appears in the I ph – P profiles for the negative‐bias region, where the illumination dependence of photocurrent is explored. It is found that the (PVP:Gr‐ZnTiO 3 ) interlayer leads to an increase in the S , R , and D * values of the PD to ≈1200, 400 mA W −1 , and 1.14 × 10 14 Jones, respectively. These results show that the used (PVP:ZnTiO 3 ) interlayer displays an excellent photoresponse and may effectively replace conventional PDs for applications in optoelectronic and photovoltaic devices.