Chemical and Electronic Structure of Buried W/Cu, W/Cr, and W/Mo Interfaces by In Situ XPS/HAXPES Auger Parameter Analysis

ABSTRACT The changes in the local chemical state of W interfacial atoms at buried W/Cu, W/Cr, and W/Mo interfaces in multilayers and cosputtered alloys have been investigated by chemical state analysis using in situ XPS/HAXPES. An Auger parameter shift of W interfacial atoms is found to depend on the degree of chemical miscibility of the atoms at the interface being maximum for the Mo/W system. This experimental trend cannot be rationalized by the electronegativity differences between W, Cu, Cr, and Mo. The nonuniformity of the electron density at the studied interfaces with W (and possible also the structural mismatch and intermixing) should be accounted for to accurately predict the measured trend of the Auger parameter for the different interfaces with W. The experimental data are supported by ab initio calculations of the charge transfer at the metal interfaces. This work demonstrates that the Auger parameter shift provides a very sensitive probe for studying the chemical and electronic structure of buried interfaces at an atomic scale.

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Publication Details

Journal
Surface and Interface Analysis
Published
2025-02-27
DOI
https://doi.org/10.1002/sia.7391
Citations
7
Primary Topic
Metal and Thin Film Mechanics
Type
article
Field-Weighted Citation Impact
6.05

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article

Chemical and Electronic Structure of Buried W/Cu, W/Cr, and W/Mo Interfaces by In Situ XPS/HAXPES Auger Parameter Analysis

Lars P. H. Jeurgens, Claudia Cancellieri, John F. Watts, Giacomo Lorenzin et al.
7 citations
Surface and Interface Analysis
Metal and Thin Film Mechanics
6.05
article

Chemical and Electronic Structure of Buried W/Cu, W/Cr, and W/Mo Interfaces by In Situ XPS/HAXPES Auger Parameter Analysis

Lars P. H. Jeurgens, Claudia Cancellieri, John F. Watts, Giacomo Lorenzin, Vladyslav Turlo, Manura Lyanage
article en
7 citations

Abstract

ABSTRACT The changes in the local chemical state of W interfacial atoms at buried W/Cu, W/Cr, and W/Mo interfaces in multilayers and cosputtered alloys have been investigated by chemical state analysis using in situ XPS/HAXPES. An Auger parameter shift of W interfacial atoms is found to depend on the degree of chemical miscibility of the atoms at the interface being maximum for the Mo/W system. This experimental trend cannot be rationalized by the electronegativity differences between W, Cu, Cr, and Mo. The nonuniformity of the electron density at the studied interfaces with W (and possible also the structural mismatch and intermixing) should be accounted for to accurately predict the measured trend of the Auger parameter for the different interfaces with W. The experimental data are supported by ab initio calculations of the charge transfer at the metal interfaces. This work demonstrates that the Auger parameter shift provides a very sensitive probe for studying the chemical and electronic structure of buried interfaces at an atomic scale.

Surface and Interface AnalysisVol. 57(5)
University of Surrey (GB), École Polytechnique Fédérale de Lausanne (CH), Swiss Federal Laboratories for Materials Science and Technology (CH)
National Science Foundation, Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung, National Center of Competence in Research Materials’ Revolution: Computational Design and Discovery of Novel Materials
Openalex Percentile: Top 4%
Metal and Thin Film Mechanics
6.05
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Chemical and Electronic Structure of Buried W/Cu, W/Cr, and W/Mo Interfaces by In Situ XPS/HAXPES Auger Parameter Analysis — Lars P. H. Jeurgens, Claudia Cancellieri, et al. · Surface and Interface Analysis (2025) | TGRS Research Map | TGRS