Quantum Dot‐Enhanced Dual‐Modality Heterojunction Optoelectronic Synapse for Neuromorphic Computing

Abstract The advancement of optoelectronic sensing synapse devices, which integrate multiple sensory modalities and achieve the efficiency of biological vision systems, is crucial for the field of artificial vision systems. This work incorporates CdSe/CdSe x S 1‐x quantum dots with In 2 O 3 semiconductor into a heterojunction via low‐cost fully solution‐based process to endow the synaptic transistor with dual‐modality of lights and electricity. Optoelectronic synaptic transistors exhibit sensitivity to a broad spectrum of light, encompassing wavelengths ranging from 395 to 808 nm, in addition to their responsiveness to electrical signals. The efficiency of information processing is therefore improved by integration of senses. Additionally, by doping lithium ions into the dielectric layer, the gate capacitance is increased by over ten times and significantly improved the devices channel modulation and retention characteristics. An artificial visual perception demo based on the Quantum Dot‐Enhanced synaptic ransistors (QDET) is well presented to showcase their practical application in pattern recognition and QDETs offer a promising platform for energy‐efficient, high‐performance neuromorphic systems.