Recent Advances in Polymer Gate Dielectrics for Organic Thin‐Film Transistors
Abstract Organic thin‐film transistors (OTFTs) are integral to develop future large‐area functional devices. The performance of OTFTs is remarkably related to the gate dielectric material, which affects key parameters, such as on/off ratio, low hysteresis, and device stability. This paper presents a review of novel polymer gate dielectric materials for OTFTs. It begins with an outline of the history of OTFTs, their principles of operation, basic structures, and processing demands associated with the development of cost‐effective organic electronic devices. Two classes of OTFT dielectrics developed in the last decades are reviewed: polymer dielectric materials; polymeric–inorganic hybrid dielectric materials. The recent literature pertaining to gate dielectric materials with excellent dielectric properties, which also provide tunable and reduced OTFT operating voltages are summarized.
Authors
- Shaoxiong Liu (ORCID: https://orcid.org/0009-0005-7398-5431)
- Bo Wu (ORCID: https://orcid.org/0000-0003-2055-4302)
- Lü Li (ORCID: https://orcid.org/0009-0005-0580-8767)
- Kaifeng Wang (ORCID: https://orcid.org/0000-0002-3371-1250)
- Shiming Zhang (ORCID: https://orcid.org/0000-0002-7062-6661)
Institutions
- Nanjing Tech University (CN)
Publication Details
- Journal
- Macromolecular Chemistry and Physics
- Published
- 2025-03-11
- DOI
- https://doi.org/10.1002/macp.202400540
- Citations
- 3
- Primary Topic
- Organic Electronics and Photovoltaics
- Type
- article
- Field-Weighted Citation Impact
- 2.19
Funders
- Government of Jiangsu Province
- Natural Science Foundation of Jiangsu Province