Impact of Electro‐Magnets on Enhanced Hall‐Effect Amplifier Nanoscale Device (HAND) – Part 2: Optimization Review

Abstract A series of complex, complementary numerical and analytical analyses are performed toward the challenging fabrication of the next generation of a nanometric device entitled hall amplifier nanoscale device (HAND). This nanoscale device, based on the well‐known macro–Hall effect, possesses two modes of operation: Amplification mode, using a direct current (DC) applied voltage, and Mixer mode, using an alternating current (AC) applied voltage. Per the Hall effect, the device receives a current as an input, and creates a voltage as an output, creating low input impedance, as well as high output impedance. Models are developed to forecast the device's functionality, quality and reliability, with a focus on phenomena such as local heat transfer and mega‐magnet feasibility inside integrated circuits. The pre‐processing optimization study focused on two main areas (among others): The material composition of the device (e.g., superconductors, ferromagnetic materials, and graphene), and its geometry (e.g., bar, coil, shape, dimensions, and more). As compared to existing Hall effect‐based micro‐ and nanoscale sensors and devices, HAND presents broader opportunities with its two modes of operation, with possible usage in electronic circuits at very high frequencies (tens of Terahertz (THz)), increasing computing rates in the microelectronics industry.

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Publication Details

Journal
Advanced Theory and Simulations
Published
2025-03-11
DOI
https://doi.org/10.1002/adts.202500033
Citations
2
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
Field-Weighted Citation Impact
1.46
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article

Impact of Electro‐Magnets on Enhanced Hall‐Effect Amplifier Nanoscale Device (HAND) – Part 2: Optimization Review

Avi Karsenty, Raz Mottes, E. K. L. Haffner, Daniel Netanyahu
2 citations
Advanced Theory and Simulations
Advancements in Semiconductor Devices and Circuit Design
1.46
article

Impact of Electro‐Magnets on Enhanced Hall‐Effect Amplifier Nanoscale Device (HAND) – Part 2: Optimization Review

Avi Karsenty, Raz Mottes, E. K. L. Haffner, Daniel Netanyahu
article en
2 citations

Abstract

Abstract A series of complex, complementary numerical and analytical analyses are performed toward the challenging fabrication of the next generation of a nanometric device entitled hall amplifier nanoscale device (HAND). This nanoscale device, based on the well‐known macro–Hall effect, possesses two modes of operation: Amplification mode, using a direct current (DC) applied voltage, and Mixer mode, using an alternating current (AC) applied voltage. Per the Hall effect, the device receives a current as an input, and creates a voltage as an output, creating low input impedance, as well as high output impedance. Models are developed to forecast the device's functionality, quality and reliability, with a focus on phenomena such as local heat transfer and mega‐magnet feasibility inside integrated circuits. The pre‐processing optimization study focused on two main areas (among others): The material composition of the device (e.g., superconductors, ferromagnetic materials, and graphene), and its geometry (e.g., bar, coil, shape, dimensions, and more). As compared to existing Hall effect‐based micro‐ and nanoscale sensors and devices, HAND presents broader opportunities with its two modes of operation, with possible usage in electronic circuits at very high frequencies (tens of Terahertz (THz)), increasing computing rates in the microelectronics industry.

Advanced Theory and SimulationsVol. 8(7)
Jerusalem College of Technology (IL)
Openalex Percentile: Top 19%
Advancements in Semiconductor Devices and Circuit Design
1.46
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