GaN Schottky‐Gate p‐Field Effect Transistors Based on GaN‐on‐Si Platform Operational at High Temperatures

The performance of Schottky‐gate p‐GaN/AlGaN p‐field effect transistors (FETs) based on a GaN‐on‐Si platform operation at high temperatures is reported. To enhance high‐temperature robustness, the gate dielectric‐free design is employed. Temperature‐dependent transistor performance is systematically studied, including transfer characteristics, field‐effect mobility, gate leakage, output characteristics, and ohmic contact. The channel resistance in p‐FET and transfer length method structure are also analyzed. Gallium nitride (GaN) p‐FET operation with an on/off current ratio of >10 3 and a decent − I D,max × L DS (≈10 μA) is achieved at a wide temperature range of 25–350 °C. This work offers valuable insights into the design and fabrication of GaN p‐FET and GaN complementary metal‐oxide‐semiconductor for high‐temperature applications.