Improvement of light extraction and carrier injection in far UV-C LEDs on AlN substrate via conductive p-Al<sub>0.45</sub>Ga<sub>0.55</sub>N contact layer
Abstract In this study, we report the application of a p-Al 0.45 Ga 0.55 N contact layer in far ultraviolet-C light-emitting diodes (LEDs) on AlN substrates to enhance wall-plug efficiency (WPE). The LEDs achieved an optical power of 9.3 mW and a voltage of 6.4 V at 100 mA current, corresponding to a 1.7-fold improvement in WPE (1.4%) compared to conventional p-GaN-based LEDs. Lifetime tests suggest that this efficiency gain arises from both light extraction and carrier injection. Finally, Hall-effect measurements of bulk Mg-doped Al 0.45 Ga 0.55 N demonstrated low resistivity, small activation energy, and inverted carrier type.
Authors
- TaeGi Lee
- Hirotsugu Kobayashi (ORCID: https://orcid.org/0000-0001-6080-3647)
- Yusuke Okuaki
- Mitsuhiro Nakayama (ORCID: https://orcid.org/0000-0002-3051-7874)
Institutions
- Asahi Kasei (Japan) (JP)
Publication Details
- Journal
- Applied Physics Express
- Published
- 2025-03-01
- DOI
- https://doi.org/10.35848/1882-0786/adbfda
- Citations
- 6
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 7.55