Electronic and Optical Properties of thin Amorphized a-Si:H Films

The paper investigates the electrical and optical properties of α-Si films:H depends on the concentration of the hydrogen content. A technology for the formation of α-Si has been developed:H by the method of high-frequency glow discharge. It is shown that the electrical conductivity of films prepared at H2 concentrations of 75 and 90 % is significantly higher than for those prepared in pure silane, and the activation energies are 0.78 and 0.66 eV, respectively; it is shown that when H2 is added to SiH4, the electronic and optical properties of α-Si films:H prepared by the decomposition of a gas mixture in a glow discharge undergo noticeable changes. It was found that the optimal composition of the SiH4 + H2 mixture for the production of α-Si:H films is determined not only by the low concentration of H2, but also by other parameters of the deposition process, including the geometry of the system.