Thermal and plasma-enhanced ALD for the synthesis of inverse opal Al2O3 and its composite materials

This study explores the synthesis and characterization of inverse opal photonic crystals (IOPC) composed of Al 2 O 3 and its composites, coated with ultra-thin ZnO and TiO 2 layers using thermal atomic layer deposition (TALD) and plasma-enhanced ALD (PEALD). Polystyrene (PS) opal nanospheres (460 nm) served as a template on a silicon wafer. Al 2 O 3 was infiltrated into a PS opal template and subsequently calcined to remove the template. Ultra-thin ZnO and TiO 2 layers were deposited via TALD/PEALD to form composite IOPCs. Characterization by SEM/EDX, TG, UV-Vis spectroscopy, atomic force microscopy (AFM), photoluminescence (PL), and XPS confirmed the periodic, interconnected IO structures. The Al 2 O 3 IOPC demonstrated template removal and a reduced sphere diameter to ∼433 nm. Composite structures-maintained periodicity, with TALD yielding smoother surfaces compared to PEALD. The incorporation of ZnO and TiO 2 layers increased surface roughness. UV-Vis spectroscopy revealed absorption peaks at 275 nm for Al 2 O 3 , with additional peaks at 400 nm and 529 nm related to the photonic band gap and slow photon effects. XPS analysis reveals characteristic peaks for Al 2 O 3 , ZnO, and TiO 2 , along with oxygen vacancies and aluminum hydroxide formation, while elemental data highlight successful ZnO and TiO 2 incorporation with PEALD outperforming TALD in ZnO deposition. In this study PEALD enhanced film growth and tailored properties, while TALD offered smooth, conformal coatings and precise control over IOPC properties, both contributing to the design of advanced IO-based photonic materials. • Synthesis of Al 2 O 3 inverse opal photonic crystals using thermal and plasma-enhanced ALD. • Ultra-thin ZnO and TiO 2 composite layers achieved with TALD and PEALD techniques. • Morphological and structural analyses confirmed the uniformity and periodicity of IO structures. • PEALD provided enhanced defect passivation and growth rates, while TALD ensured smoother conformality. • Photoluminescence studies demonstrated improved optical properties with ZnO and TiO 2 coatings.

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Publication Details

Journal
Vacuum
Published
2025-03-12
DOI
https://doi.org/10.1016/j.vacuum.2025.114254
Citations
3
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
2.19
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article

Thermal and plasma-enhanced ALD for the synthesis of inverse opal Al2O3 and its composite materials

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3 citations
Vacuum
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article

Thermal and plasma-enhanced ALD for the synthesis of inverse opal Al2O3 and its composite materials

Hamsasew Hankebo Lemago, Zoltán Erdélyi, E. Baradács, Csaba Cserháti, Petra Pál, Dóra Hessz, Gyula Jágerszki, Tamás Fodor, Imre Miklós Szilágyi, Soeun Choi Arwen
article en
3 citations

Abstract

This study explores the synthesis and characterization of inverse opal photonic crystals (IOPC) composed of Al 2 O 3 and its composites, coated with ultra-thin ZnO and TiO 2 layers using thermal atomic layer deposition (TALD) and plasma-enhanced ALD (PEALD). Polystyrene (PS) opal nanospheres (460 nm) served as a template on a silicon wafer. Al 2 O 3 was infiltrated into a PS opal template and subsequently calcined to remove the template. Ultra-thin ZnO and TiO 2 layers were deposited via TALD/PEALD to form composite IOPCs. Characterization by SEM/EDX, TG, UV-Vis spectroscopy, atomic force microscopy (AFM), photoluminescence (PL), and XPS confirmed the periodic, interconnected IO structures. The Al 2 O 3 IOPC demonstrated template removal and a reduced sphere diameter to ∼433 nm. Composite structures-maintained periodicity, with TALD yielding smoother surfaces compared to PEALD. The incorporation of ZnO and TiO 2 layers increased surface roughness. UV-Vis spectroscopy revealed absorption peaks at 275 nm for Al 2 O 3 , with additional peaks at 400 nm and 529 nm related to the photonic band gap and slow photon effects. XPS analysis reveals characteristic peaks for Al 2 O 3 , ZnO, and TiO 2 , along with oxygen vacancies and aluminum hydroxide formation, while elemental data highlight successful ZnO and TiO 2 incorporation with PEALD outperforming TALD in ZnO deposition. In this study PEALD enhanced film growth and tailored properties, while TALD offered smooth, conformal coatings and precise control over IOPC properties, both contributing to the design of advanced IO-based photonic materials. • Synthesis of Al 2 O 3 inverse opal photonic crystals using thermal and plasma-enhanced ALD. • Ultra-thin ZnO and TiO 2 composite layers achieved with TALD and PEALD techniques. • Morphological and structural analyses confirmed the uniformity and periodicity of IO structures. • PEALD provided enhanced defect passivation and growth rates, while TALD ensured smoother conformality. • Photoluminescence studies demonstrated improved optical properties with ZnO and TiO 2 coatings.

VacuumVol. 238
University of Debrecen (HU), HUN-REN Institute for Nuclear Research (HU), Budapest University of Technology and Economics (HU), Institute of Materials and Environmental Chemistry (HU)
Openalex Percentile: Top 13%
Semiconductor materials and devices
2.19
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