Enhancing Si MOSFET Reliability: Short-Circuit Protection Design, Analysis, and Experimental Validation
Inverters are critical parts in two-stage isolated DC-DC converters, and the reliability of their switches is paramount. This paper investigates the common short-circuit faults in inverters through experimental trials, specifically focusing on the withstand time of the Si MOSFET switches under fault conditions. Additionally, the study involves the practical implementation of a protection system aimed at safeguarding against short-circuit faults. The results provide important insights to enhance the reliability and safety of inverter systems, offering practical improvements for power electronics.
Authors
- Shahriyar Kaboli (ORCID: https://orcid.org/0000-0002-1764-4115)
- Mostafa Zarghani (ORCID: https://orcid.org/0000-0001-5286-0799)
- Abbas Sheikhi Azizi
- Poriya Amerian
Institutions
- Sharif University of Technology (IR)
Publication Details
- Published
- 2025-02-04
- DOI
- https://doi.org/10.1109/pedstc65486.2025.10911995
- Citations
- 1
- Primary Topic
- Integrated Circuits and Semiconductor Failure Analysis
- Type
- article
- Field-Weighted Citation Impact
- 0.73