Impact of Irradiation on NCFinFET at Different Incidence Angles Using Numerical Device Simulations

This study uses numerical device simulations to investigate the effect of irradiation on an MFIS NCFinFET structure. By analyzing the single event transient effect induced by ionizing particles with varying linear energy transfer values and different angles of incidence, we identify the specific regions of the device that are vulnerable to such interactions. The device's most vulnerable location is the one with the maximum Q<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">collect</inf>, while the least vulnerable site has the minimal Q<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">collect</inf>, Moreover, the vulnerable location of the device varies with the incidence angle.