Proton Energy Dependence of SiC Power MOSFET Single-Event Burnout Sensitivity
The proton energy dependence of single-event burnout (SEB) sensitivity of silicon carbide (SiC) power MOSFETs is studied. The experimental results show that SEB is dependent on the primary proton energy and the drain bias voltage applied during irradiation. The secondary particles, produced by the nuclear reactions between primary particles and device materials, are studied using Geant4 simulations. A method for finding the criteria for the failure based on experimental radiation data and Geant4 simulation data is presented.
Authors
- Ulrike Großner (ORCID: https://orcid.org/0000-0002-2495-8550)
- C. Martinella (ORCID: https://orcid.org/0000-0003-3476-4802)
- Arto Javanainen (ORCID: https://orcid.org/0000-0001-7906-3669)
- H. Kettunen
- K. Niskanen (ORCID: https://orcid.org/0000-0003-1083-1273)
- W. Hajdas
Institutions
- Paul Scherrer Institute (CH)
- Advanced Power Electronics (United States) (US)
- University of Jyväskylä (FI)
Publication Details
- Journal
- IEEE Transactions on Nuclear Science
- Published
- 2025-03-12
- DOI
- https://doi.org/10.1109/tns.2025.3550609
- Citations
- 3
- Primary Topic
- Radiation Effects in Electronics
- Type
- article
- Field-Weighted Citation Impact
- 2.19
Funders
- European Space Agency
- European Commission