Microdosimetry of Very-High-Energy Heavy Ion Beams for Electronics Testing Using Silicon-on-Insulator Detectors
This article explores the use of microdosimetry with a silicon-on-insulator (SOI) detector for characterizing very-high-energy (VHE) heavy ion beams used specifically for single event effect (SEE) testing of electronics. The detector was deployed at CERN’s heavy ion facility for radiation effects testing and exposed to lead ion beams in the 100–1000 MeV per nucleon kinetic energy range. The implications and possible benefits of using microdosimetry for SEE testing purposes are discussed.
Authors
- James Vohradsky (ORCID: https://orcid.org/0000-0002-8792-2694)
- P. Nieminen
- Marco Povoli (ORCID: https://orcid.org/0000-0003-3644-8424)
- Angela Kok (ORCID: https://orcid.org/0000-0003-2389-1590)
- Andreas Waets (ORCID: https://orcid.org/0000-0002-6450-9784)
- Uwe Schneider (ORCID: https://orcid.org/0000-0002-6403-204X)
- Vladimir Pan (ORCID: https://orcid.org/0000-0002-0482-3229)
- Anatoly Rosenfeld (ORCID: https://orcid.org/0000-0001-5116-6308)
- Rubén García Alía (ORCID: https://orcid.org/0000-0001-8030-1804)
- Natalia Emriskova (ORCID: https://orcid.org/0000-0002-5834-8515)
- Linh T. Tran (ORCID: https://orcid.org/0000-0002-3321-2611)
- Karolina Klimek
Institutions
- SINTEF (NO)
- University of Zurich (CH)
- University of Wollongong (AU)
- European Space Research and Technology Centre (NL)
- European Organization for Nuclear Research (CH)
- ZTE (United States) (US)
Publication Details
- Journal
- IEEE Transactions on Nuclear Science
- Published
- 2025-03-12
- DOI
- https://doi.org/10.1109/tns.2025.3550471
- Citations
- 1
- Primary Topic
- Ion-surface interactions and analysis
- Type
- article
- Field-Weighted Citation Impact
- 1.33