Incomplete donor ionization based 2D-charge density and drain current model for δ-doped <i>β</i>-(AlxGa1−x)2O3/Ga2O3 HFET

In this paper, we present a 2D-charge density model for a δ-doped β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistor considering incomplete donor ionization. A region-based approach is implemented to model the 2D-charge density valid for all the gate voltages. The effect of donor energy and conduction band offset is studied using the unified model. Subsequently, the proposed 2D-charge density model is further utilized to develop a drain current model incorporating incomplete donor ionization. The obtained unified model for the 2D-charge density and drain current is validated with different experimental data, showing good accuracy. Hence, the proposed unified models will be instrumental to explore the donor ionization effect on 2D-charge density, which will help us select the type of donors to obtain optimum 2D-charge density along with the prediction of drain current for various high-power applications.