Device edge termination effects on TDDB in galvanic isolators based on polymeric dielectrics

We present an investigation on the impact of device edge termination on Time-Dependent Dielectric Breakdown (TDDB) in galvanic isolators based on polymeric dielectrics. By means of experimental and numerical analyses, we highlight that electrode thickness and device passivation are important design elements to limit the impact of electric field intensification at device on TDDB and prolong device lifetime. Results point out key aspects to consider to push the performance and the reliability of modern galvanic isolators to their ultimate limits. • Electric field intensification at device edge can worsen TDDB in galvanic isolators. • Design of device edge termination is critical for galvanic isolators reliability. • Electrode thickening and passivation improve the TDDB lifetime of galvanic isolators.