A survey of structural design and performance impacts of GAA MBCFET

The Gate-All-Around Multi-Bridge Channel Field-Effect Transistor (GAA MBCFET) plays an important role in tackling short-channel effects and revitalizing Moore’s Law, which gains increasing attention in future research. It evolved from FinFET and features many unique structures, including vertically stacked nanosheets and their derivative structures, which significantly impact device performance. At the same time, they also introduce many new challenges in terms of process and cost. This paper provides guidance on optimizing MBCFET structural design by quantifying the effects of nanosheet width, thickness, and gate length on key performance metrics like subthreshold swing (SS), threshold voltage (<i>V_th</i>), and drain-induced barrier lowering (DIBL). Additionally, the specific impacts of internal structures, including nanosheet spacing and internal spacers, on device performance are investigated, offering potential research directions. The study concludes that although the unique structure of the GAA MBCFET presents significant cost and technical challenges due to its complex manufacturing process and high precision requirements, the performance improvements afforded by this structure affirm its potential as an excellent direction for future chip development at extremely small nanometer-scale dimensions.