Effect of Alpha-Particle Irradiation on the Electrophysical Properties of the p-n Junction on the p-type Si+2 at.% Ge Alloy

The electrophysical and current-voltage characteristics of the p-n junction created on the p-type monocrystalline Si+2at.%Ge substrate have been studied under alpha particle irradiation at varying fluences. The changes in the electrical characteristics of the p-n junction in both the initial and irradiated states were investigated. It was found that, with increasing alpha particle fluence, the short-circuit current and photoelectric conversion efficiency significantly decrease, while the fill factor and open circuit voltage decrease only slightly. The mechanisms of the electrical characteristics degradation of the p-n junction under alpha radiation are analyzed. It is proposed that the significant decrease in short-circuit current and conversion efficiency may be attributed to a reduction in the lifetime of minority current carriers. The contribution of localized deformation near Ge atoms, the spatial distribution of the impurity-radiation defect complex surrounding dislocations, and the electrical activity and stability of these defects in the formation of the electrophysical properties of the p-n junction on the Si+2at.%Ge substrate are discussed.