Fano interference in single-molecule transistors

Quantum interference has been intensively pursued in molecular electronics to investigate and utilize coherent electron transport at the ultra-small level. An essential type of quantum interference with drastic destructive-constructive switching, known as Fano interference, has been widely reported in various kinds of nanoelectronics electronic systems, but not yet been electrostatically gating in a single-molecule device. Here, we fabricate the three-terminal single-molecule transistors based on the molecule with a long backbone and a side group to demonstrate the gate-controllable Fano interference. By applying bias and gate voltages, the two-dimensional differential conductance map shows the noncentrosymmetrical Fano patterns. Combined with the electron transport model and the first principles calculations, the resonant parameters of the Fano interference can unveil the coupling geometry of the junction and the spatial distribution of the resonant states. Our findings provide an instrumental method to induce and utilize the quantum interference behaviors at the molecular level.

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Publication Details

Journal
Applied Physics Letters
Published
2025-03-01
DOI
https://doi.org/10.1063/5.0254457
Citations
4
Primary Topic
Molecular Junctions and Nanostructures
Type
article
Field-Weighted Citation Impact
2.92

Funders

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article

Fano interference in single-molecule transistors

Minhao Zhang, Jian Chen, Yiping Ouyang, Xianghua Kong et al.
4 citations
Applied Physics Letters
Molecular Junctions and Nanostructures
2.92
article

Fano interference in single-molecule transistors

Minhao Zhang, Jian Chen, Yiping Ouyang, Xianghua Kong, Xuecou Tu, Deping Guo, Jianguo Wan, Yang‐Yang Ju, Yuan‐Zhi Tan, Fengqi Song, Zewen Wu, Peiheng Wu, Danfeng Pan, Shuai Zhang, Xuefeng Wang, Jun Chen, Wei Ji, Lin Kang, Rui Wang
article en
4 citations

Abstract

Quantum interference has been intensively pursued in molecular electronics to investigate and utilize coherent electron transport at the ultra-small level. An essential type of quantum interference with drastic destructive-constructive switching, known as Fano interference, has been widely reported in various kinds of nanoelectronics electronic systems, but not yet been electrostatically gating in a single-molecule device. Here, we fabricate the three-terminal single-molecule transistors based on the molecule with a long backbone and a side group to demonstrate the gate-controllable Fano interference. By applying bias and gate voltages, the two-dimensional differential conductance map shows the noncentrosymmetrical Fano patterns. Combined with the electron transport model and the first principles calculations, the resonant parameters of the Fano interference can unveil the coupling geometry of the junction and the spatial distribution of the resonant states. Our findings provide an instrumental method to induce and utilize the quantum interference behaviors at the molecular level.

Applied Physics LettersVol. 126(10)
Shenzhen University (CN), Xiamen University (CN), Collaborative Innovation Center of Advanced Microstructures (CN), Renmin University of China (CN), Nanjing University (CN)
National Natural Science Foundation of China, China Postdoctoral Science Foundation, Guangdong Science and Technology Department, National Key Research and Development Program of China
Openalex Percentile: Top 10%
Molecular Junctions and Nanostructures
2.92
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