High‐Performance p‐NiO/β‐Ga₂O₃ Heterostructure Junction Field‐Effect Transistors with Mesa Field Plate Structure

Herein, based on the heterostructure junction field‐effect transistor (HJFETs) structure, a gate‐drain mesa field plate (G‐DMT) structure is designed based on the construction of a p‐NiO/β‐Ga 2 O 3 HJFET device model and compared with the gate‐drain flat plate (G‐DFPT) structure. The effects of different NiO doping concentrations (NA), epitaxial layer doping concentrations (EPI), and gate materials on the electrical properties of the two structures are systematically analyzed and compared under the same device parameters. The results show that both devices realize the enhancement mode, but the G‐DMT structure has higher threshold voltage (Vth) and saturation current. When the NA is 1 × 1018 cm −3 , the EPI is 9 × 1016 cm −3 , and the gate oxide material is HfO 2 , the peak transconductance of G‐DMT reaches 44.11 mS mm, while the peak transconductance of G‐DFPT is 40.32 mS mm. At the same time, the maximum power factor of merit (PFOM) of G‐DMT reaches 4.04 GW cm − 2 , while the maximum PFOM of G‐DFPT is only 1.31 GW cm − 2 . This study provides new ideas and directions for the design of high‐performance β‐Ga 2 O 3 HJFETs.