In Situ X‐Ray Photoelectron Spectroscopy Study of Atomic Layer Deposited Cerium Oxide on SiO<sub>2</sub>: Substrate Influence on the Reaction Mechanism During the Early Stages of Growth (Adv. Mater. Interfaces 5/2025)
Atomic Layer Deposition Understanding complex growth mechanisms and interface effects is crucial for tuning the properties of ultrathin functional materials. In article 2400537, Jan Ingo Flege and co-workers have utilized classic surface techniques for in situ characterization of atomic-layer-deposited cerium oxide to unravel film-substrate interactions and determine, depending on the film thickness, the growth behavior and chemistry of this prototypical reducible oxide.
Authors
- Carlos Rojas (ORCID: https://orcid.org/0000-0002-7968-4833)
- Carlos Morales (ORCID: https://orcid.org/0000-0001-5890-1950)
- Markus Andreas Schubert (ORCID: https://orcid.org/0009-0000-7213-0443)
- Jan Ingo Flege (ORCID: https://orcid.org/0000-0002-8346-6863)
- Karsten Henkel (ORCID: https://orcid.org/0000-0001-7212-019X)
- Christian Wenger (ORCID: https://orcid.org/0000-0003-3698-2635)
- Małgorzata Kot (ORCID: https://orcid.org/0000-0001-7170-4513)
- Marvin Hartwig Zoellner (ORCID: https://orcid.org/0000-0001-7204-1096)
- Max Gertig
Institutions
- Brandenburg University of Technology Cottbus-Senftenberg (DE)
- Leibniz Institute for High Performance Microelectronics (DE)
Publication Details
- Journal
- Advanced Materials Interfaces
- Published
- 2025-02-27
- DOI
- https://doi.org/10.1002/admi.202570012
- Primary Topic
- Electron and X-Ray Spectroscopy Techniques
- Type
- article
- Field-Weighted Citation Impact
- 0.00