Post-CMP Clean Optimization for SiCN Hybrid Bonding Applications

Recently, there has been increased focus in the field of advanced packaging, with hybrid bonding being the next major technology inflection. SiCN is being widely studied as an alternate dielectric to traditional TEOS in the hybrid bonding of fine-pitch structures, owing to its superior properties such as high bond strength and low leakage. As a relatively new dielectric, the integration of SiCN into hybrid bonding process schemes needs to be studied in detail. In this paper, we explore the impact of post-CMP cleaning process on various aspects affecting SiCN hybrid bonding, namely particle count, Cu oxide formation, impact on Cu recess. Using post-bonding cSAM yield and bonding strength as key performance evaluation metrics, we demonstrate that the optimized post-CMP clean process enables both SiCN and TEOS hybrid bonding integration.