Study on Mechanical Failure Forms of Copper/Tantalum Contact Interface in Through Silicon Via

The integration of through-silicon via (TSV) technology is essential for advancing 3D packaging, yet the mechanical reliability of copper/tantalum (Cu/Ta) interfaces remains a critical issue. This paper presents a molecular dynamics study on the mechanical failure mechanisms at the Cu/Ta interface, focusing on the effects of interfacial defects under shear and tensile loading. By simulating various defect ratios, the influence of these imperfections on dislocation behavior, phase transformations, and overall mechanical strength is explored. The results highlight that higher defect ratios lead to a reduction in shear strength, dislocation accumulation, and structural instability, while tensile tests reveal progressive void expansion and fracture initiation at defect sites. These findings contribute to a deeper understanding of interfacial failure in TSV structures and provide guidance for improving the mechanical robustness of 3D electronic packaging.