Applicability of Flash Lamp Annealing (FLA) Method on Heat Treatment Cu Thin Film and Low Dielectric Resin Films

The Flash Lamp Annealing (FLA) method allows a fast heating up of the outermost surfaces with a UV to visible wavelength light flash as quick as one millisecond. Thereby, the achievable final temperature of the layer could be more than <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1000^{\circ}\mathrm{C}$</tex> depending on the intensity of the light flash and on the optical properties of the flash lamp annealed material. Since the conventional annealing method involves heating in an electric oven for an hour which exposes annealing materials to high temperature for a long time and increase the risk of material wreckage. Therefore, the FLA method plays an important role in annealing thin metal film on resin film and preventing from hydrogen embrittlement and resin film heat damages. It is becoming a useful method for electronics device developments such as zero diffusion of Si wafers, glass, and low-k resin film substrates, which allows specific thermal modification of surface layers with or without reducing the thermal exposure of the substrates.