High Temperature Stable Temporary Bond Adhesive for IR Laser Debonding Enables NewProcess Integration For Thin Wafers

In this work we demonstrate the application of the IR laser-based wafer debonding technology (EVG®880 LayerRelease™) in combination with adhesively bonded Si wafers. The employed adhesive, BrewerBOND® C1301-10 material from Brewer Science, Inc., possesses high temperature stability up to 450°C, which was proven by temperature stress tests and subsequent scanning acoustic microscopy (C-SAM) investigations. After successful IR laser debonding and carrier lift off from the 50 μm thin device wafer the inorganic release layer (RL) was cleaned off from the device side by an inorganic cleaning solvent. Likewise, the temporary bonding material (TBM) used for the bonding could be removed by a special solvent cleaner developed for this adhesive material.