Equivalent Electromagnetic Radiation Model of Chip Based on Near-Field Scanning for EMI Analysis in Ceramic SiP

With the continuous increase in system-in-package (SiP) integration and chip frequencies, electromagnetic interference (EMI) issues have become increasingly prominent. To perform EMI simulation of SiP, it is essential to first establish the radiation model of chip. this study proposes a method for developing an equivalent radiation model for SiP-integrated chips using near-field scanning techniques. By considering the packaging configuration of the chip within SiP, the equation between the electric dipole and magnetic dipole arrays and the magnetic field on the scanning plane is established. The Tikhonov regularization method is then employed to solve this equation, yielding the equivalent dipole model. Application examples demonstrate that the proposed reconstruction method can achieve satisfactory accuracy, and the accuracy of the proposed equivalent model is also validated using the Frequency Selective Voltage (FSV) method. Based on this model, further analysis of EMI within SiP is conducted, and the results demonstrate that the model has significant application value in accurately analyzing and evaluating EMI within SiP.

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Published
2024-12-03
DOI
https://doi.org/10.1109/eptc62800.2024.10909891
Citations
1
Primary Topic
Electromagnetic Compatibility and Measurements
Type
article
Field-Weighted Citation Impact
0.21

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article

Equivalent Electromagnetic Radiation Model of Chip Based on Near-Field Scanning for EMI Analysis in Ceramic SiP

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1 citations
Electromagnetic Compatibility and Measurements
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article

Equivalent Electromagnetic Radiation Model of Chip Based on Near-Field Scanning for EMI Analysis in Ceramic SiP

Pan Ren, Cong Liu, Xiaojie Li, Wei Zhang, Pingan Du, Yaya Liang
article en
1 citations

Abstract

With the continuous increase in system-in-package (SiP) integration and chip frequencies, electromagnetic interference (EMI) issues have become increasingly prominent. To perform EMI simulation of SiP, it is essential to first establish the radiation model of chip. this study proposes a method for developing an equivalent radiation model for SiP-integrated chips using near-field scanning techniques. By considering the packaging configuration of the chip within SiP, the equation between the electric dipole and magnetic dipole arrays and the magnetic field on the scanning plane is established. The Tikhonov regularization method is then employed to solve this equation, yielding the equivalent dipole model. Application examples demonstrate that the proposed reconstruction method can achieve satisfactory accuracy, and the accuracy of the proposed equivalent model is also validated using the Frequency Selective Voltage (FSV) method. Based on this model, further analysis of EMI within SiP is conducted, and the results demonstrate that the model has significant application value in accurately analyzing and evaluating EMI within SiP.

University of Electronic Science and Technology of China (CN)
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 43%
Electromagnetic Compatibility and Measurements
0.21
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