Integration Module of Dual MOSFET Switching Circuit Using Embedded Silicon Fan-Out (eSiFO) Technology

In this paper, an innovative integration module for dual MOSFET switching circuits based on eSiFO technology is presented, which consists of two P-type MOSFET (PMOS) chips and two N-type MOSFET (NMOS) chips. The cavities formed on silicon wafer by ICP dry etching method, the double-sided electrode of MOSFET chips are attached into cavity and the micro-scale gap between chips and cavities is filled by epoxy PI material. The MOSFET pads were fanned out by redistributed layer (RDL) on surface and metallization plating on all sides, and then interconnected with the array BGA solder balls. The parasitic resistance of returning current path based on eSiFO technology is lower than the traditional WB packaging, which will be beneficial to reducing the power loss and reducing heat generation. Meanwhile, the above mentioned integration modules ensure exceptional thermal performance, the steady-state thermal simulation and tests show that temperatures consistently maintained below 50°C when subjected to a 10A electric current.