Silicon Interposer Heterogenous Integration Platform for Millimeter-Wave Ka and V Band Satellite Applications

Leveraging millimeter-wave dual Ka and V bands promises enhanced bandwidth, speed, and reconfigurability in the next generation satellite communication. In this paper, a High Resistive (HiR) silicon-interposer platform is designed, fabricated, and evaluated for Ka and V band satellite applications. Measurements confirm the platform's capability of providing high-quality factor passives and low-loss interconnects over dual bands, showcasing low loss CPW lines of 0.15-0.24dB/mm, flip chips of 0.09-0.24dB, and high Q inductors with inductance of 285-310pH and Q >41 at 27-52GHz for Ka (27-31GHz) and V (47-52GHz) dual-band applications. This study is pivotal for enabling the heterogeneous integration (HI) of millimeter-wave chips in this platform, facilitating the development of highly integrated phased array beam steering modules for next-generation high-speed satellite communication applications.