Advantages of Digital Lithography in Patterning of UHD FOWLP Utilizing Novel PI Dielectrics

The UHD FO WLP design that will be required for future HPC and AI devices places stringent requirements on the lithographic patterning of the RDL and VIA. The patterning technology must be sufficiently flexible to accommodate multiple design modifications and provide rapid tape out support for the accelerated development of innovative semiconductor devices. The material must possess enhanced dielectric properties, enabling the patterning of the bottom via profiles with a profile less the 5 µm, with the film thickness remaining at 5 µm, and proving the sustainable development of materials. The combination of the patterning with the recently developed digital lithography system and high-resolution polyimide dielectric ensures that the technology, materials, and processes meet the requisite advanced packaging standards.