Packaging Design and Loss Analysis of RC-IGBT and SiC MOSFET Hybrid Module

Due to the relatively slow turn-on speed of the RC-IGBT and the higher conduction losses of the SiC MOSFET, the applications of both in the medium to high power market are somewhat limited. To address this, this paper combines a 1200V/275A RC-IGBT chip with a 1200V/11m Ω SiC MOSFET chip into a new hybrid power module that leverages the advantages of both devices. The mechanical and thermal performance of the module is validated using ANSYS Q3D and ANSYS Workbench platforms, while switching loss analysis is conducted through a dual-pulse model built in LT-spice. Simulation results indicate that the maximum temperature of the module reaches <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$141.59^{\circ} \mathrm{C}$</tex>, the maximum thermal stress is 362.93 MPa, and the overall stray inductance is approximately 31.9 nH. When the switching sequence of the module chips has the SiC MOSFET turn on first and then turn off, the total switching loss of the hybrid module is minimized, with total switching losses increasing with load current. Comparative analysis of switching losses among the hybrid module, RC-IGBT, and SiC MOSFET reveals that the RC-IGBT has the highest switching losses, while the hybrid module's switching losses are slightly greater than those of the SiC MOSFET, with all three exhibiting increased switching losses as load current rises.