Effect of Mesh Ground Plane on Impedance Control and Crosstalk of Organic Interposers Targeted for High Bandwidth Memory Applications

High bandwidth memory (HBM) applications involve large numbers of channels while require fine interconnects to support the high data transfer. For performance optimized interconnects, advanced packaging options comprising of silicon bridges is considered by the UCIe Specifications. Based on this, the authors consider the use of a mesh ground in an organic interposer and consider its influence on the interconnect electrical performance (crosstalk, insertion loss) as well as from an impedance point of view.