Multiwindow Implantation Method in Vertical Hall Devices for High Sensitivity

A novel vertical Hall device (VHD), featuring a waved boundary magnetic-sensitive well, is proposed for the first time in this article. By applying multiwindow implantation (MWI) method in 0.15-<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula> m bipolar-CMOS–DMOS (BCD) platform, nonuniform doping profile in lateral and vertical directions is realized and the path of bias current is changed subsequently. The current path with long route and low resistance in the proposed VHD increases the ratio of longitudinal current and a current related sensitivity (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${S} _{I}$ </tex-math></inline-formula>) of 178 V/AT is achieved, which is 49.6% improved compared with the standard VHD. The proposed VHD provides a new solution for the design of high-sensitivity Hall device.