The Impact of Process Steps on Nearly Ideal Subthreshold Slope in 300-mm Compatible InGaZnO TFTs
While we demonstrate a back-gated (BG) amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) transistors with a nearly ideal subthreshold slope (SS) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim ~60$ </tex-math></inline-formula> mV/dec. However, SS degrades when a top-gated (TG) configuration is implemented. The energy distribution of traps inferred from temperature-dependent (T =4 K - 300 K) and multi-frequency (f =1 kHz - 100 kHz) admittance measurements, reveals a much higher trap density in TG devices. By analyzing the impact of each process step and conducting forming gas anneal (FGA) experiments, we reveal the role of hydrogen in the deterioration of the SS in the IGZO-based transistors.
Authors
- Subhali Subhechha (ORCID: https://orcid.org/0000-0002-1960-5136)
- Hongwei Tang (ORCID: https://orcid.org/0009-0005-1345-5551)
- S. Subramanian
- Jan Van Houdt (ORCID: https://orcid.org/0000-0003-1381-6925)
- Daisuke Matsubayashi (ORCID: https://orcid.org/0000-0002-2332-2569)
- Yiqun Wan
- Attilio Belmonte (ORCID: https://orcid.org/0000-0002-3947-1948)
- Michiel J. van Setten (ORCID: https://orcid.org/0000-0003-0557-5260)
- Adrian Chasin (ORCID: https://orcid.org/0000-0002-9940-0260)
- Nouredine Rassoul (ORCID: https://orcid.org/0000-0001-9489-3396)
- Harold Dekkers
- Gouri Sankar Kar (ORCID: https://orcid.org/0000-0003-3122-4237)
- Yuchao Jiang (ORCID: https://orcid.org/0000-0002-4465-0457)
- Valeri Afanasiev (ORCID: https://orcid.org/0000-0001-5018-4539)
- Zhuo Chen (ORCID: https://orcid.org/0000-0002-7407-8885)
- Jie Li (ORCID: https://orcid.org/0009-0000-6093-2537)
- Dennis Lin (ORCID: https://orcid.org/0000-0002-1577-6050)
Institutions
- IMEC (BE)
- KU Leuven (BE)
Publication Details
- Journal
- IEEE Electron Device Letters
- Published
- 2025-03-11
- DOI
- https://doi.org/10.1109/led.2025.3549865
- Citations
- 1
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.73