Electric field‐induced defect redistribution along a near 23° (100) tilt grain boundary in SrTiO <sub>3</sub>

Abstract An electrostatic field strength of 11.6 V/mm was applied during thermal annealing along the grain boundary plane of a near 23° (100) tilt grain boundary in SrTiO 3 . Electron microscopy characterization revealed the development of an increased number of pores located at the grain boundary plane near the positive electrode. Toward the negative electrode a lower physical density at the interface and a wider grain boundary core structure was observed compared to areas close to the positive electrode. Atomic resolution scanning transmission electron microscopy identified different structure units for the grain boundary core in the proximity of the two electrodes and a higher density of interfacial steps close to the negative electrode. Electron energy‐loss spectroscopy confirms modifications of the local interfacial bonding, stronger reduction of Ti cations, and distorted Ti─O octahedra close to the negative electrode. The experimental observations demonstrate field‐induced redistribution of oxygen vacancies along the interface plane accommodated by disconnection movement.

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Publication Details

Journal
Journal of the American Ceramic Society
Published
2025-03-06
DOI
https://doi.org/10.1111/jace.20459
Citations
1
Primary Topic
Electronic and Structural Properties of Oxides
Type
article
Field-Weighted Citation Impact
0.52
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article

Electric field‐induced defect redistribution along a near 23° (100) tilt grain boundary in SrTiO 3

Klaus van Benthem, William C. Hahn, Andrew R. Lupini
1 citations
Journal of the American Ceramic Society
Electronic and Structural Properties of Oxides
0.52
article

Electric field‐induced defect redistribution along a near 23° (100) tilt grain boundary in SrTiO 3

Klaus van Benthem, William C. Hahn, Andrew R. Lupini
article en
1 citations

Abstract

Abstract An electrostatic field strength of 11.6 V/mm was applied during thermal annealing along the grain boundary plane of a near 23° (100) tilt grain boundary in SrTiO 3 . Electron microscopy characterization revealed the development of an increased number of pores located at the grain boundary plane near the positive electrode. Toward the negative electrode a lower physical density at the interface and a wider grain boundary core structure was observed compared to areas close to the positive electrode. Atomic resolution scanning transmission electron microscopy identified different structure units for the grain boundary core in the proximity of the two electrodes and a higher density of interfacial steps close to the negative electrode. Electron energy‐loss spectroscopy confirms modifications of the local interfacial bonding, stronger reduction of Ti cations, and distorted Ti─O octahedra close to the negative electrode. The experimental observations demonstrate field‐induced redistribution of oxygen vacancies along the interface plane accommodated by disconnection movement.

Journal of the American Ceramic SocietyVol. 108(7)
Oak Ridge National Laboratory (US), University of Alabama (US), University of California, Davis (US)
Openalex Percentile: Top 41%
Electronic and Structural Properties of Oxides
0.52
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