Magnetism control of thin CoFeB layers by ferroelectric polarization

Abstract Nonvolatile and reversible control of perpendicular magnetic properties of thin Co 0.2 Fe 0.6 B 0.2 layers formed on a MgO layer was demonstrated by ferroelectric switching of the stacked Al 0.88 Sc 0.12 N and Ta 2 O 5 layers. A change in the coercivity ( H c ) of the 1.3-nm-thick Co 0.2 Fe 0.6 B 0.2 layer from 30 to 141 Oe was confirmed by depleting electrons at the interface, modifying the magnetic domain wall energy. Saturation magnetization showed a slight decrease toward depletion condition, presumably presenting a dead layer at the interface. The ferroelectric polarization-induced control of magnetism has high potential for magnetic memory applications.