Evidence for Topological States and a Lifshitz Transition in Metastable 2<i>M</i>‐WSe<sub>2</sub>

Abstract In recent years, T d transition metal dichalcogenides have been heavily explored for their type‐II Weyl topology, gate‐tunable superconductivity, and nontrivial edge states in the monolayer limit. Here, the Fermi surface characteristics and fundamental transport properties of similarly structured 2 M ‐WSe 2 bulk single crystals are investigated. The measurements of the angular dependent Shubnikov–de Haas oscillations, with support from first‐principles calculations, reveal multiple three‐ and two‐dimensional Fermi pockets, one of which exhibits a nontrivial Berry's phase. In addition, it is shown that the electronic properties of 2 M ‐WSe 2 are similar to those of orthorhombic MoTe 2 and WTe 2 , having a single dominant carrier type at high temperatures that evolves into coexisting electron and hole pockets with near compensation at temperatures below 100 K, suggesting the existence of a Lifshitz transition. Altogether, the observations provide evidence towards the topologically nontrivial electronic properties of 2 M ‐WSe 2 and motivate further investigation on the topological properties of 2 M transition metal dichalcogenides in the atomically thin limit.

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Publication Details

Journal
Advanced Functional Materials
Published
2025-03-11
DOI
https://doi.org/10.1002/adfm.202420356
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
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Evidence for Topological States and a Lifshitz Transition in Metastable 2M‐WSe2

Nicholas Pederson, Paul M. Voyles, Takashi Taniguchi, Yangchen He et al.
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Advanced Functional Materials
2D Materials and Applications
article

Evidence for Topological States and a Lifshitz Transition in Metastable 2M‐WSe2

Nicholas Pederson, Paul M. Voyles, Takashi Taniguchi, Yangchen He, Daniel Rhodes, Brenna C. Bierman, Jun Xiao, Xiaofeng Qian, Zizhong Li, Carter Fox, Alex Strasser, Hongrui Ma, Nicholas Hagopian, Ying Wang, Kenji Watanabe
article en

Abstract

Abstract In recent years, T d transition metal dichalcogenides have been heavily explored for their type‐II Weyl topology, gate‐tunable superconductivity, and nontrivial edge states in the monolayer limit. Here, the Fermi surface characteristics and fundamental transport properties of similarly structured 2 M ‐WSe 2 bulk single crystals are investigated. The measurements of the angular dependent Shubnikov–de Haas oscillations, with support from first‐principles calculations, reveal multiple three‐ and two‐dimensional Fermi pockets, one of which exhibits a nontrivial Berry's phase. In addition, it is shown that the electronic properties of 2 M ‐WSe 2 are similar to those of orthorhombic MoTe 2 and WTe 2 , having a single dominant carrier type at high temperatures that evolves into coexisting electron and hole pockets with near compensation at temperatures below 100 K, suggesting the existence of a Lifshitz transition. Altogether, the observations provide evidence towards the topologically nontrivial electronic properties of 2 M ‐WSe 2 and motivate further investigation on the topological properties of 2 M transition metal dichalcogenides in the atomically thin limit.

Advanced Functional MaterialsVol. 35(31)
University of Wisconsin–Madison (US), National Institute for Materials Science (JP), Texas A&M University (US)
National Science Foundation, U.S. Department of Energy, Japan Society for the Promotion of Science London
Openalex Percentile: Top 97%
2D Materials and Applications
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