Non‐vacuum Solution‐Processable Zr‐ and Ti‐functionalized Colloidal Organic/Inorganic Nanohybrid Materials Inducing Different Dielectric Properties and Low‐Voltage Driving Printed Electronics Applications

Abstract Two new organic–inorganic (O–I) hybrid materials are synthesized and used as insulating layers for thin‐film and fully printed electronics using non‐vacuum, low‐temperature processing. The O–I hybrid materials are composed of high‐permittivity (high‐k) oxide components, ZrO₂ and TiO₂, combined with organic three‐arm structured amphiphilic components. These materials, designated as UZr and UTi, exhibited dielectric constants (k) of 12.43 and 17.33, respectively. Thin films made of both materials exhibited smooth surfaces, good insulating performance, and excellent mechanical flexibility; however, their morphologies varied depending on the specific oxide component. Thin‐film transistors (TFTs) fabricated with UZr and UTi layers demonstrate outstanding electrical performances under low‐voltage conditions (≈2 V). However, distinct driving/hysteresis behavior is observed owing to the differences in their morphological and dielectric properties between UZr and UTi. The variations in their dielectric behavior render these materials suitable for use in different types of devices, including transistors, memory devices, and integrated printed electronics. This straightforward synthetic strategy for producing high‐k O–I hybrid materials paves a new pathway for the development of advanced materials for thin films and printed electronics.