Overcoming Endurance Limitations in Organic Nonvolatile Memories Through N‐Type Small‐Molecule Semiconductor Implementation and Thermal Optimization

Abstract Organic field‐effect transistor‐based nonvolatile memories (ONVMs) are pivotal in advanced electronic systems but often suffer from limited endurance, a characteristic that remains poorly understood across varying device structures. This work reveals a general mechanism for the deterioration of ONVM endurance related to the imperfect crystallinity of n‐type small‐molecule‐semiconductor charge‐trapping layer, N,N′‐Ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (PTCDI‐C 13 ). Through the optimization of annealing temperatures aimed at minimizing deep traps, the endurance characteristics of pentacene‐based ONVMs are greatly improved, sustaining high I ON / I OFF ratios larger than 10 4 without notable degradation over 10 4 programming/erasing cycles, a marked improvement over previous configurations. This research not only advances the understanding of the physical mechanisms underlying ONVMs’ degradation but also offers a practical approach to significantly enhance the endurance of memory devices. These insights are crucial for the development of ONVMs with robust performance suitable for advanced electronic systems.