Charge balance effect on the phase stability and reliability in doped HfO2-ZrO2 superlattice films for further DRAM capacitors: A first-principles study

A dielectric material with a higher permittivity and a lower leakage is required to meet the demands of three-dimensional (3D) dynamic random access memory (DRAM). Current morphotropic phase boundary (MPB) behavior exhibits a higher permittivity but relatively high leakage. In this work, we propose a feasible approach to achieve MPB and low leakage by the charge balance effect in the doped HfO2-ZrO2 superlattice system. Our first-principles calculations reveal that the synergy effect of doping and oxygen vacancies can achieve lower phase transition barriers between polar and nonpolar phases, suggesting the formation of more MPB regions. Especially for Y dopant, it is more preferred due to the smallest transition barrier. Additionally, defect states arising from oxygen vacancies can be passivized at the charge balance state to enable large bandgap, suppressing leakage currents. This work provides a potential solution for a dielectric material with a higher permittivity and a lower leakage, paving the way for future 3D DRAM capacitors.

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Publication Details

Journal
Applied Physics Letters
Published
2025-03-01
DOI
https://doi.org/10.1063/5.0252127
Citations
1
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
Field-Weighted Citation Impact
0.73

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article

Charge balance effect on the phase stability and reliability in doped HfO2-ZrO2 superlattice films for further DRAM capacitors: A first-principles study

Runsheng Wang, Yichen Wen, Jinhao Liu, Miaojia Yuan et al.
1 citations
Applied Physics Letters
Ferroelectric and Negative Capacitance Devices
0.73
article

Charge balance effect on the phase stability and reliability in doped HfO2-ZrO2 superlattice films for further DRAM capacitors: A first-principles study

Runsheng Wang, Yichen Wen, Jinhao Liu, Miaojia Yuan, Pengpeng Ren, Zhigang Ji, Xuepei Wang, Maokun Wu, Feng Lu, Boyao Cui, Ting Zhang, Weihua Wang, Hong-Liang Lu, Hong Dong, Yishan Wu, Ru Huang, Yilin Hu, S. Ye
article en
1 citations

Abstract

A dielectric material with a higher permittivity and a lower leakage is required to meet the demands of three-dimensional (3D) dynamic random access memory (DRAM). Current morphotropic phase boundary (MPB) behavior exhibits a higher permittivity but relatively high leakage. In this work, we propose a feasible approach to achieve MPB and low leakage by the charge balance effect in the doped HfO2-ZrO2 superlattice system. Our first-principles calculations reveal that the synergy effect of doping and oxygen vacancies can achieve lower phase transition barriers between polar and nonpolar phases, suggesting the formation of more MPB regions. Especially for Y dopant, it is more preferred due to the smallest transition barrier. Additionally, defect states arising from oxygen vacancies can be passivized at the charge balance state to enable large bandgap, suppressing leakage currents. This work provides a potential solution for a dielectric material with a higher permittivity and a lower leakage, paving the way for future 3D DRAM capacitors.

Applied Physics LettersVol. 126(10)
Shanghai Jiao Tong University (CN), Peking University (CN), Nankai University (CN), Fudan University (CN), State Key Laboratory of ASIC and System
National Natural Science Foundation of China
Openalex Percentile: Top 31%
Ferroelectric and Negative Capacitance Devices
0.73
DOISourceOpenAlex
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