Investigation of Switching Mechanical Wave in Single-Tube IGBT Using Laser Interferometric Vibrometer

Switching mechanical wave (SMW) occurring at switching moment in insulated gate bipolar transistor (IGBT) has attracted extensive attention in recent years. However, AE sensors widely utilized in current researches can hardly realize the SMW detection in the local area of single-tube IGBTs due to the limitations of large volume and low spatial resolution, thus hindering the further investigation of SMW effect mechanism revelation and physical properties. Therefore, this work aims to develop a high spatial resolution laser interferometric detection system to capture SMW signals at different spatial locations of single-tube IGBTs, thus enhancing the comprehension on the underlying mechanisms and physical properties of SMW effect in single-tube IGBTs.

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Publication Details

Published
2024-11-03
DOI
https://doi.org/10.1109/iecon55916.2024.10905490
Citations
1
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
0.21

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article

Investigation of Switching Mechanical Wave in Single-Tube IGBT Using Laser Interferometric Vibrometer

Yuhua Cheng, Quan Zhou, Libing Bai, Lulu Tian et al.
1 citations
Silicon Carbide Semiconductor Technologies
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article

Investigation of Switching Mechanical Wave in Single-Tube IGBT Using Laser Interferometric Vibrometer

Yuhua Cheng, Quan Zhou, Libing Bai, Lulu Tian, Jiahao Wang, Cong Chen
article en
1 citations

Abstract

Switching mechanical wave (SMW) occurring at switching moment in insulated gate bipolar transistor (IGBT) has attracted extensive attention in recent years. However, AE sensors widely utilized in current researches can hardly realize the SMW detection in the local area of single-tube IGBTs due to the limitations of large volume and low spatial resolution, thus hindering the further investigation of SMW effect mechanism revelation and physical properties. Therefore, this work aims to develop a high spatial resolution laser interferometric detection system to capture SMW signals at different spatial locations of single-tube IGBTs, thus enhancing the comprehension on the underlying mechanisms and physical properties of SMW effect in single-tube IGBTs.

University of Electronic Science and Technology of China (CN)
National Natural Science Foundation of China, Fundamental Research Funds for the Central Universities
Affordable and clean energy
Openalex Percentile: Top 43%
Silicon Carbide Semiconductor Technologies
0.21
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