Extraction of Switching Mechanical Wave Signal on IGBT Chips Utilizing Empirical Mode Decomposition

Switching mechanical wave (SMW) effect has attracted extensive attention over the past few years owing to its broad application prospects in condition monitoring for insulated gate bipolar transistor (IGBT) devices. The latest research suggests that the method of directly measuring the mechanical vibration signal on IGBT bare die by laser vibrometer is of great significance and potential to the mechanism revelation of SMW effect and the accurate extraction of its physical characteristics. Nevertheless, the measured vibration signals in IGBT modules by laser vibrometer typically contain a variety of other interference signals, such as thermal deformation signal, electromagnetic jamming, and background noise, in addition to the expected target SMW signals. Therefore, the aim of this work is to develop an effective signal decoupling method to realize the extraction of SMW signal from the aliasing signals obtained by laser vibration measurement.