Investigation and modeling mechanism on capacitance characteristic with electrical measurement to ferroelectric random access memory

Abstract Ferro-elecric random access memory (FeRAM) is considered to be one of the most promising candidates for the next-generation emerging memory. In this study, the electrical measurements, including the capacitance–voltage (C–V), current–voltage (I–V), and polarity-voltage (P-V) characteristics of FeRAM, are investigated and analyzed by using electrical measurements. The demonstration of the butterfly-like C–V curve, primarily contributed to by ferroelectric dipoles, is initially proved through the dielectric displacement current in the current–time (I-t) curves. However, it remains challenging to explain why the C–V curve takes on a butterfly-like profile from theoretical calculations. Therefore, an approach involving secondary scans is adopted for explanation. It is considered that the butterfly-like profile is predominantly influenced by non-ideal dipoles. Furthermore, the response of these dipoles to C–V parameters is also discussed within this investigation. Through these measurements, a more profound comprehension and exploration regarding the C–V characteristics of FeRAM can be achieved, which helps to understand the behavior of FeRAM devices, providing more insights into their electrical characteristics.