Band Offsets at the Interface of 4H-SiC/SiO2

The author through this brief communication wishes to publicize the findings of the band offsets at the Si-faced 4H-SiC/SiO2 interface through an intense and focused research in the area of Metal-Insulator-Semiconductor (MIS) characterization in an academic environment, since the starting of his Ph.D. in 1989 to eight years work from home from March 2017 to February 2025, a total of over 35 years.

Authors

Publication Details

Journal
Applied sciences research periodicals.
Published
2025-03-05
DOI
https://doi.org/10.63002/asrp.32.854
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
0.00
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Band Offsets at the Interface of 4H-SiC/SiO2

Ravi Kumar Chanana
2 links
Applied sciences research periodicals.
Silicon Carbide Semiconductor Technologies
article

Band Offsets at the Interface of 4H-SiC/SiO2

Ravi Kumar Chanana
article en

Abstract

The author through this brief communication wishes to publicize the findings of the band offsets at the Si-faced 4H-SiC/SiO2 interface through an intense and focused research in the area of Metal-Insulator-Semiconductor (MIS) characterization in an academic environment, since the starting of his Ph.D. in 1989 to eight years work from home from March 2017 to February 2025, a total of over 35 years.

Applied sciences research periodicals.Vol. 3(2)
Openalex Percentile: Top 97%
Silicon Carbide Semiconductor Technologies
DOIOpen Access PDFOpenAlex
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Band Offsets at the Interface of 4H-SiC/SiO2 — Ravi Kumar Chanana · Applied sciences research periodicals. (2025) | TGRS Research Map | TGRS