WSe<sub>2</sub>: ZnO Nanocomposite Based UV Photodetector with PMMA (HTL) and PCBM (ETL)

This letter reports a Al/PCBM/WSe<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>: ZnO/PMMA/ ITO coated PET structure based UV photodetector. The fabricated device consist of WSe2: ZnO nanocomposite (NC) as an active layer whereas PMMA as a HTL (hole transport layer) and PCBM as a ETL (electron transport layer). All the sols were prepared by the dispersion method and the films were deposited through spin coating technique. The Al contacts were deposited over PCBM acting as ETL by means of thermal evaporation unit. The proposed photodetector exhibits UV detection with maximum responsivity Rs(A/W) of 1579 AIW, 576AIW, and 127 AIW; at 300nm, 350nm and 400nm at 0.5V bias. The nanocomposite, HTL and ETL, shows the promising characteristics for optoelectronic application.

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Publication Details

Published
2024-12-01
DOI
https://doi.org/10.1109/tencon61640.2024.10902712
Primary Topic
ZnO doping and properties
Type
article
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article

WSe2: ZnO Nanocomposite Based UV Photodetector with PMMA (HTL) and PCBM (ETL)

Shweta Tripathi, R. K. Nagaria, Tulika Bajpai
ZnO doping and properties
article

WSe2: ZnO Nanocomposite Based UV Photodetector with PMMA (HTL) and PCBM (ETL)

Shweta Tripathi, R. K. Nagaria, Tulika Bajpai
article en

Abstract

This letter reports a Al/PCBM/WSe<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>: ZnO/PMMA/ ITO coated PET structure based UV photodetector. The fabricated device consist of WSe2: ZnO nanocomposite (NC) as an active layer whereas PMMA as a HTL (hole transport layer) and PCBM as a ETL (electron transport layer). All the sols were prepared by the dispersion method and the films were deposited through spin coating technique. The Al contacts were deposited over PCBM acting as ETL by means of thermal evaporation unit. The proposed photodetector exhibits UV detection with maximum responsivity Rs(A/W) of 1579 AIW, 576AIW, and 127 AIW; at 300nm, 350nm and 400nm at 0.5V bias. The nanocomposite, HTL and ETL, shows the promising characteristics for optoelectronic application.

Motilal Nehru National Institute of Technology (IN)
Openalex Percentile: Top 83%
ZnO doping and properties
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WSe<sub>2</sub>: ZnO Nanocomposite Based UV Photodetector with PMMA (HTL) and PCBM (ETL) — Shweta Tripathi, R. K. Nagaria, et al. · (2024) | TGRS Research Map | TGRS