A 25Gbps Single-Ended to Differential Low-Noise Transimpedance Amplifier in 45nm SOI for High-Speed Optical Transceivers

High-speed optical transceivers are advancing towards lower noise and power consumption, necessitating enhanced transimpedance amplifier (TIA) designs. This paper presents a 25Gbps single-ended to differential (S2D) low-noise TIA implemented in 45nm SOI technology. The design utilizes AC-coupling capacitors and a cross-coupled capacitor pair to achieve differential output. To optimize noise and bandwidth performance, a high-gain, low-bandwidth input stage is followed by a continuous-time linear equalizer (CTLE). The CTLE incorporates inductive peaking and negative capacitance techniques, achieving a bandwidth extension ratio (BWER) of 3.9 with less than 0.5dB peaking. Post-simulation results demonstrate the TIA achieves a transimpedance gain of 57.1 dB and a bandwidth of 23.7 GHz, considering a photodiode capacitance of 70fF. The input average noise current spectral density is 10.9 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$pA/\sqrt{Hz}$</tex>, with a power consumption of 38mW at a 1.3V supply voltage.

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Published
2024-12-01
DOI
https://doi.org/10.1109/tencon61640.2024.10903126
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
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article

A 25Gbps Single-Ended to Differential Low-Noise Transimpedance Amplifier in 45nm SOI for High-Speed Optical Transceivers

Juncheng Deng, Yizhe Hu, Liheng Lou, Luyao Yuan et al.
Radio Frequency Integrated Circuit Design
article

A 25Gbps Single-Ended to Differential Low-Noise Transimpedance Amplifier in 45nm SOI for High-Speed Optical Transceivers

Juncheng Deng, Yizhe Hu, Liheng Lou, Luyao Yuan, Ping Ma, Fujiang Lin, Ahmed Wahba, C. Patrick Yue, Jinfeng Xie, Zeyu Zhou
article en

Abstract

High-speed optical transceivers are advancing towards lower noise and power consumption, necessitating enhanced transimpedance amplifier (TIA) designs. This paper presents a 25Gbps single-ended to differential (S2D) low-noise TIA implemented in 45nm SOI technology. The design utilizes AC-coupling capacitors and a cross-coupled capacitor pair to achieve differential output. To optimize noise and bandwidth performance, a high-gain, low-bandwidth input stage is followed by a continuous-time linear equalizer (CTLE). The CTLE incorporates inductive peaking and negative capacitance techniques, achieving a bandwidth extension ratio (BWER) of 3.9 with less than 0.5dB peaking. Post-simulation results demonstrate the TIA achieves a transimpedance gain of 57.1 dB and a bandwidth of 23.7 GHz, considering a photodiode capacitance of 70fF. The input average noise current spectral density is 10.9 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$pA/\sqrt{Hz}$</tex>, with a power consumption of 38mW at a 1.3V supply voltage.

University of Science and Technology of China (CN), Zagazig University (EG), Hong Kong University of Science and Technology (HK)
National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 74%
Radio Frequency Integrated Circuit Design
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A 25Gbps Single-Ended to Differential Low-Noise Transimpedance Amplifier in 45nm SOI for High-Speed Optical Transceivers — Juncheng Deng, Yizhe Hu, et al. · (2024) | TGRS Research Map | TGRS